Radiation-induced surface leakage currents in silicon microstrip detectors

被引：10

作者：

Foland, AD

Alexander, JP

Hopman, PI

Kim, PC

Ward, CW

机构：

[1] Laboratory of Nuclear Studies, Newman Laboratory, Cornell University, Ithaca

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1996年 / 43卷 / 03期

关键词：

D O I：

10.1109/23.507215

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

After exposure to X-rays and UV Light, we have observed induced leakage currents in silicon microstrip detectors designed for CLEO III. UV measurements have shown that the damage is confined to the Si-SiO2 interface. The damage is manifested only as a leakage current without additional 1/f noise or significant changes to detector parameters. The damage rate is measured to be 5+/-1 nA/cm(2)/kRad for 20 keV X-rays.

引用

页码：1746 / 1750

页数：5