ELECTRON-PARAMAGNETIC RESONANCE AND CAPACITANCE-VOLTAGE STUDIES OF ULTRAVIOLET IRRADIATED SI-SIO2 INTERFACES

被引：7

作者：

BROWER, KL

SCHUBERT, WK

SEAGER, CH

机构：

[1] Sandia National Laboratories, Albuquerque

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 01期

关键词：

D O I：

10.1063/1.347146

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron paramagnetic resonance and capacitance-voltage studies of hydrogen passivated Si-SiO2 interfaces indicate that UV irradiation of the interface does not result in the creation of new Pb centers or interface states providing no photocurrent is allowed to pass through the oxide. This is in contrast to the generally known fact that UV irradiation with photoinjection does form interface states.

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页码：366 / 368

页数：3

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