High Performance Field-Effect Ammonia Sensors Based on a Structured Ultrathin Organic Semiconductor Film

被引：281

作者：

Li, Liqiang ^{[1
,2
]}

Gao, Peng ^{[3
]}

Baumgarten, Martin ^{[3
]}

Muellen, Klaus ^{[3
]}

Lu, Nan ^{[4
]}

Fuchs, Harald ^{[1
,2
]}

Chi, Lifeng ^{[1
,2
,5
]}

机构：

[1] Univ Munster, Inst Phys, D-48149 Munster, Germany

[2] Univ Munster, Ctr Nanotechnol CeNTech, D-48149 Munster, Germany

[3] Max Planck Inst Polymer Res, D-55128 Mainz, Germany

[4] Jilin Univ, State Key Lab Supramol Struct & Mat, Changchun 130023, Peoples R China

[5] Soochow Univ, Funct Nano & Soft Mat Lab FUNSOM, Suzhou 215123, Peoples R China

来源：

ADVANCED MATERIALS | 2013年 / 25卷 / 25期

关键词：

sensors; organic transistors; ammonia; ultrathin microstripes; dip-coating; SELF-ASSEMBLED MONOLAYERS; EFFECT TRANSISTORS; BIAS STRESS; GAS; FABRICATION; RESPONSES; NANOWIRE;

D O I：

10.1002/adma.201301138

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

High performance organic field-effect transistor (OFET)-based ammonia sensors are demonstrated with ultrathin (4-6 molecular layers) dendritic microstripes of an organic semiconductor prepared via dip-coating. These sensors exhibit high sensitivity, fast response/recovery rate, good selectivity, low concentration detection ability, and reliable reversibility, as well as stability. Such a performance represents great progress in the field of OFET-based sensors. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：3419 / 3425

页数：7

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