Bias Stress Effect in "Air-Gap" Organic Field-Effect Transistors

被引：73

作者：

Chen, Y. ^{[1
]}

Podzorov, V. ^{[1
,2
]}

机构：

[1] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA

[2] Rutgers State Univ, IAMDN, Piscataway, NJ 08854 USA

来源：

ADVANCED MATERIALS | 2012年 / 24卷 / 20期

基金：

美国国家科学基金会;

关键词：

organic single crystal; field-effect transistor; bias stress effect; THIN-FILM TRANSISTORS; TRANSPORT; CRYSTALS; RUBRENE;

D O I：

10.1002/adma.201200455

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：2679 / 2684

页数：6

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