Photon-Assisted Oxygen Diffusion and Oxygen-Related Traps in Organic Semiconductors

被引：50

作者：

Najafov, Hikmet ^{[1
,3
]}

Mastrogiovanni, Daniel ^{[2
]}

Garfunkel, Eric ^{[2
,3
]}

Feldman, Leonard C. ^{[3
]}

Podzorov, Vitaly ^{[1
,3
]}

机构：

[1] Rutgers State Univ, Dept Phys, Piscataway, NJ 08854 USA

[2] Rutgers State Univ, Dept Chem, Piscataway, NJ 08854 USA

[3] Rutgers State Univ, Inst Adv Mat & Devices Nanotechnol, Piscataway, NJ 08854 USA

来源：

ADVANCED MATERIALS | 2011年 / 23卷 / 08期

基金：

美国国家科学基金会;

关键词：

RUBRENE; TRANSISTORS; LIGHT;

D O I：

10.1002/adma.201004239

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A highly sensitive trap characterization technique based on wavelength- and polarization-resolved photocurrent excitation spectroscopy of single crystalline organic semiconductors is described. The method reveals that even a brief illumination of organic molecular crystals in an oxygen atmosphere triggers a long-term oxygen diffusion in the dark that results in formation of traps at depth scales comparable to the light penetration length. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：981 / 985

页数：5

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