Density of bulk trap states in organic semiconductor crystals: Discrete levels induced by oxygen in rubrene

被引：123

作者：

Krellner, C. ^{[1
]}

Haas, S. ^{[1
]}

Goldmann, C. ^{[1
]}

Pernstich, K. P. ^{[1
]}

Gundlach, D. J. ^{[1
]}

Batlogg, B. ^{[1
]}

机构：

[1] ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland

来源：

PHYSICAL REVIEW B | 2007年 / 75卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.75.245115

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The density of trap states in the band gap of semiconducting organic single crystals has been measured quantitatively and with high energy resolution by means of the experimental method of temperature-dependent space-charge-limited-current spectroscopy. This spectroscopy has been applied to study bulk rubrene single crystals, which are shown by this technique to be of high chemical and structural quality. A density of deep trap states as low as similar to 10(15) cm(-3) is measured in the purest crystals, and the exponentially varying shallow trap density near the band edge could be identified (one decade in the density of states per similar to 25 meV). Furthermore, we have induced and spectroscopically identified an oxygen-related sharp hole bulk trap state at 0.27 eV above the valence band.

引用

页数：5

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