High-performance n- and p-type single-crystal organic transistors with free-space gate dielectrics

被引:393
作者
Menard, E
Podzorov, V
Hur, SH
Gaur, A
Gershenson, ME
Rogers, JA [1 ]
机构
[1] Univ Illinois, Dept Mat Sci & Engn, Beckman Inst, 1304 W Green St, Urbana, IL 61801 USA
[2] Univ Illinois, Beckman Inst, Dept Chem, Urbana, IL 61801 USA
[3] Seitz Mat Res Lab, Urbana, IL 61801 USA
[4] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA
关键词
D O I
10.1002/adma.200401017
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A novel single-crystal organic field-effect transistor (OFET) is described, in which the gate dielectric is replaced by a thin gap that can be occupied by a gas or vacuum. When used in combination with high-quality rubrene or tetracyanoquinodimethane (TCNQ) crystals, n- and p-devices with extremely good mobilities and normalized sub-threshold slopes, representing the ultimate in OFET performance, are realized.
引用
收藏
页码:2097 / 2101
页数:5
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