Characterization of bis(1,2,5-thiadiazolo)-p-quinobis(1,3-dithiole) thin films grown by organic molecular beam deposition

被引:5
作者
Xue, Jiangeng [1 ]
Qin, Jingui [2 ]
Bedworth, Peter V. [2 ]
Kustedjo, Karen [2 ]
Marder, Seth R. [2 ,3 ]
Forrest, Stephen R. [1 ]
机构
[1] Princeton Univ, Dept Elect Engn, Ctr Photon & Optoelect Mat POEM, Princeton, NJ 08544 USA
[2] CALTECH, Beckman Inst, Pasadena, CA 91125 USA
[3] Univ Arizona, Dept Chem, Tucson, AZ 85721 USA
基金
美国国家科学基金会;
关键词
Organic molecular beam deposition; bis(1,2,5-thiadiazolo)-p-quinobis(1,3-dithiole) (BTQBT); Quasiepitaxy; Organic thin film; X-ray diffraction; Electrical conductivity;
D O I
10.1016/S1566-1199(01)00020-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Crystalline thin films of the organic compound, bis(1,2,5-thiadiazolo)-p-quinobis(1,3-dithiole) (BTQBT) were grown by the ultrahigh vacuum process of organic molecular beam deposition on various substrates including highly ordered pyrolytic graphite, Si(0 0 1), glass and thermal silicon dioxide films on Si. In situ reflection high-energy electron diffraction, scanning electron microscopy, atomic force microscopy, X-ray diffraction, temperature-dependent photoluminescence spectroscopy, and electrical conductivity measurements were employed to characterize the various properties of the films. We find that ordered, polycrystalline films of the planar BTQBT molecules can be grown on a variety of substrates. The BTQBT molecules stack on substrates with their stacking axis perpendicular to the substrate plane. The degree and extent of film ordering strongly depends on the growth conditions: higher growth rates favor more ordered and uniform films. The room-temperature electrical conductivity of the films is (1.2 +/- 0.1) x 10(-3) and (7.5 +/- 0.4) x 10(-4) S cm(-1) perpendicular and parallel to the substrate surface, respectively. Both the remarkably high value of conductivity and its small anisotropy are explained in terms of the unusual crystal structure of BTQBT. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:143 / 154
页数:12
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