Continuous synthesis and characterization of silicon carbide nanorods

A two-step reaction scheme has been employed for the synthesis of SiC nanorods at 1400 degrees C. SiO vapour was generated via the silicon reduction of silica, and then this SiO vapor reacted with carbon nanotubes to form SiC nanorods. The morphology and structure of the nanorods were characterized by XRD, TEM, IR and Raman spectroscopy. The nanorods are single crystalline beta-SiC with the diameters ranging from 3 to 40 nm. A broad photoluminescence peak located around 430 nm under 260 nm UV fluorescent light excitation at room temperature is observed. A growth model of SiC nanorods is proposed.