PREPARATION AND PROPERTIES OF 2H-SIC CRYSTALS

[1] NEW TYPE OF GALLIUM ARSENIDE WHISKERS [J]. JOURNAL OF CRYSTAL GROWTH, 1971, 10 (02) : 194 - &

[2] PHOTOLUMINESCENCE AND POLYTYPISM IN BORON DOPED SILICON CARBIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (11) : 1294 - 1294

[3] Addamiano A., 1973, Journal of Luminescence, V6, P143, DOI 10.1016/0022-2313(73)90052-5

[4] COILED CRYSTALS OF GALLIUM-ARSENIDE [J]. JOURNAL OF CRYSTAL GROWTH, 1971, 11 (03) : 351 - +

[5] AKIMCHEN.IP, 1972, SOV PHYS SEMICOND+, V6, P1039

[6] AKIMCHENKO IP, 1973, SOV PHYS SEMICOND+, V7, P659

[7] GROWTH OF SILICON CARBIDE NEEDLES BY THE VAPOR-LIQUID-SOLID METHOD [J]. JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) : 314 - &

[8] DOLLOFF RT, 1960, WADD60143 TECH REP 1

[9] ELLIOT RP, 1965, CONSTITUTION BINARY, P228

[10] ALKOXYCHLOROSILANES AND ALKOXYSILANES CONTAINING SILANE HYDROGEN [J]. INORGANIC CHEMISTRY, 1963, 2 (04) : 825 - &

[1] NEW TYPE OF GALLIUM ARSENIDE WHISKERS [J]. JOURNAL OF CRYSTAL GROWTH, 1971, 10 (02) : 194 - &

[2] PHOTOLUMINESCENCE AND POLYTYPISM IN BORON DOPED SILICON CARBIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (11) : 1294 - 1294

[3] Addamiano A., 1973, Journal of Luminescence, V6, P143, DOI 10.1016/0022-2313(73)90052-5

[4] COILED CRYSTALS OF GALLIUM-ARSENIDE [J]. JOURNAL OF CRYSTAL GROWTH, 1971, 11 (03) : 351 - +

[5] AKIMCHEN.IP, 1972, SOV PHYS SEMICOND+, V6, P1039

[6] AKIMCHENKO IP, 1973, SOV PHYS SEMICOND+, V7, P659

[7] GROWTH OF SILICON CARBIDE NEEDLES BY THE VAPOR-LIQUID-SOLID METHOD [J]. JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) : 314 - &

[8] DOLLOFF RT, 1960, WADD60143 TECH REP 1

[9] ELLIOT RP, 1965, CONSTITUTION BINARY, P228

[10] ALKOXYCHLOROSILANES AND ALKOXYSILANES CONTAINING SILANE HYDROGEN [J]. INORGANIC CHEMISTRY, 1963, 2 (04) : 825 - &