NEW TYPE OF GALLIUM ARSENIDE WHISKERS

被引：6

作者：

ADDAMIAN.A

DAVEY, JE

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1971年 / 10卷 / 02期

关键词：

D O I：

10.1016/0022-0248(71)90128-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：194 / &

共 11 条

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[3]

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[5] VAPOR-LIQUID-SOLID GROWTH OF GALLIUM PHOSPHIDE (WHISKERS 900 DEGREES C E) [J].

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WOLFE, CM ;

MOORE, JS .

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[6]

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[7]

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[8] PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH [J].

KNIGHT, JR ;

EFFER, D ;

EVANS, PR .

SOLID-STATE ELECTRONICS, 1965, 8 (02) :178-&

[9]

LAVERKO E, 1965, KRISTALLOGRAFIYA, V10, P732

[10] X-RAY STUDIES OF TWINNED GAAS BLADES GROWN FROM THE VAPOR PHASE [J].

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