POLYMORPHISM IN VACUUM-DEPOSITED GAP FILMS

被引:8
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DAVEY, JE
PANKEY, T
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10.1063/1.1651883
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O59 [应用物理学];
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页码:38 / &
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[1]   WHISKER CRYSTALS OF GALLIUM ARSENIDE AND GALLIUM PHOSPHIDE GROWN BY VAPOR-LIQUID-SOLID MECHANISM [J].
BARNS, RL ;
ELLIS, WC .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (07) :2296-&
[2]  
DAVEY JE, 1968, J APPL PHYS
[3]   VAPOR-LIQUID-SOLID GROWTH OF GALLIUM PHOSPHIDE (WHISKERS 900 DEGREES C E) [J].
HOLONYAK, N ;
WOLFE, CM ;
MOORE, JS .
APPLIED PHYSICS LETTERS, 1965, 6 (04) :64-&
[4]   PREPARATION AND PROPERTIES OF EPITAXIAL GALLIUM PHOSPHIDE [J].
KAMATH, GS ;
BOWMAN, D .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) :192-&
[5]  
LAVERKO E, 1965, KRISTALLOGRAFIYA, V10, P732
[6]  
MOEST RR, 1962, J ELECTROCHEM SOC, V109, P1
[7]   VAPOR GROWTH OF GAP ON GAAS SUBSTRATES [J].
OLDHAM, WG .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2887-&