COILED CRYSTALS OF GALLIUM-ARSENIDE

被引：8

作者：

ADDAMIANO, A

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1971年 / 11卷 / 03期

关键词：

D O I：

10.1016/0022-0248(71)90109-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：351 / +

页数：1

相关论文

共 7 条

[1] NEW TYPE OF GALLIUM ARSENIDE WHISKERS
ADDAMIAN.A
DAVEY, JE
[J]. JOURNAL OF CRYSTAL GROWTH, 1971, 10 (02) : 194 - &
[2] NEW TYPE OF ZINC SULPHIDE CRYSTALS
ADDAMIANO, A
[J]. NATURE, 1957, 179 (4557) : 493 - 494
[3] WHISKER CRYSTALS OF GALLIUM ARSENIDE AND GALLIUM PHOSPHIDE GROWN BY VAPOR-LIQUID-SOLID MECHANISM
BARNS, RL
ELLIS, WC
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (07) : 2296 - &
[4] VAPOR-LIQUID-SOLID GROWTH OF GALLIUM PHOSPHIDE (WHISKERS 900 DEGREES C E)
HOLONYAK, N
WOLFE, CM
MOORE, JS
[J]. APPLIED PHYSICS LETTERS, 1965, 6 (04) : 64 - &
[5] PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH
KNIGHT, JR
EFFER, D
EVANS, PR
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 178 - &
[6] LATTICE DEFECTS IN ZINC SULPHIDE WHISKERS
TANAKA, K
MANNAMI, M
WATANABE, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (07) : 493 - &
[7] VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTH ( NEW METHOD GROWTH CATALYSIS FROM IMPURITY WHISKER EPITAXIAL + LARGE CRYSTALS SI E )
WAGNER, RS
ELLIS, WC
[J]. APPLIED PHYSICS LETTERS, 1964, 4 (05) : 89 - &