Achieving ZT=2.2 with Bi-doped n-type SnSe single crystals

被引：385

作者：

Anh Tuan Duong ^{[1
,2
]}

Van Quang Nguyen ^{[1
,2
]}

Duvjir, Ganbat ^{[1
,2
]}

Van Thiet Duong ^{[1
,2
]}

Kwon, Suyong ^{[3
]}

Song, Jae Yong ^{[3
]}

Lee, Jae Ki ^{[4
]}

Lee, Ji Eun ^{[4
]}

Park, SuDong ^{[4
]}

Min, Taewon ^{[5
]}

Lee, Jaekwang ^{[5
]}

Kim, Jungdae ^{[1
,2
]}

Cho, Sunglae ^{[1
,2
]}

机构：

[1] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea

[2] Univ Ulsan, Energy Harvest Storage Res Ctr, Ulsan 680749, South Korea

[3] Korea Res Inst Stand & Sci, Div Ind Metrol, Daejeon 305340, South Korea

[4] Korea Electrotechnol Res Inst, Creat & Fundamental Res Div, Thermoelect Convers Res Ctr, Chang Won 51543, South Korea

[5] Pusan Natl Univ, Dept Phys, Busan 605735, South Korea

来源：

NATURE COMMUNICATIONS | 2016年 / 7卷

基金：

新加坡国家研究基金会;

关键词：

THERMOELECTRIC PROPERTIES; ENHANCEMENT; PBTE;

D O I：

10.1038/ncomms13713

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Recently SnSe, a layered chalcogenide material, has attracted a great deal of attention for its excellent p-type thermoelectric property showing a remarkable ZT value of 2.6 at 923 K. For thermoelectric device applications, it is necessary to have n-type materials with comparable ZT value. Here, we report that n-type SnSe single crystals were successfully synthesized by substituting Bi at Sn sites. In addition, it was found that the carrier concentration increases with Bi content, which has a great influence on the thermoelectric properties of n-type SnSe single crystals. Indeed, we achieved the maximum ZT value of 2.2 along b axis at 733 K in the most highly doped n-type SnSe with a carrier density of -2.1 x 10(19) cm(-3) at 773 K.

引用

页数：6

共 17 条

[1] Low thermal conductivity and triaxial phononic anisotropy of SnSe [J].

Carrete, Jesus ;

Mingo, Natalio ;

Curtarolo, Stefano .

APPLIED PHYSICS LETTERS, 2014, 105 (10)

[2] Magnetic and transport properties of Mn-doped Bi2Se3 and Sb2Se3 [J].

Choi, Jeongyong ;

Lee, Hee-Woong ;

Kim, Bong-Seo ;

Park, Hyoyeol ;

Choi, Sungyoul ;

Hong, S. C. ;

Cho, Sunglae .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2006, 304 (01) :E164-E166

[3] Impurity Band Effects in Thermoelectric Materials [J].

Goldsmid, H. J. .

JOURNAL OF ELECTRONIC MATERIALS, 2012, 41 (08) :2126-2129

[4] Enhancement of thermoelectric efficiency in PbTe by distortion of the electronic density of states [J].

Heremans, Joseph P. ;

Jovovic, Vladimir ;

Toberer, Eric S. ;

Saramat, Ali ;

Kurosaki, Ken ;

Charoenphakdee, Anek ;

Yamanaka, Shinsuke ;

Snyder, G. Jeffrey .

SCIENCE, 2008, 321 (5888) :554-557

[5] Resonant levels in bulk thermoelectric semiconductors [J].

Heremans, Joseph P. ;

Wiendlocha, Bartlomiej ;

Chamoire, Audrey M. .

ENERGY & ENVIRONMENTAL SCIENCE, 2012, 5 (02) :5510-5530

[6]

Kim J, 2015, REV SCI INSTRUM, V86

[7] A microscopic study investigating the structure of SnSe surfaces [J].

Kim, Sang-ui ;

Anh-Tuan Duong ;

Cho, Sunglae ;

Rhim, S. H. ;

Kim, Jungdae .

SURFACE SCIENCE, 2016, 651 :5-9

[8] Electronic structure and thermoelectric properties of n- and p-type SnSe from first-principles calculations [J].

Kutorasinski, K. ;

Wiendlocha, B. ;

Kaprzyk, S. ;

Tobola, J. .

PHYSICAL REVIEW B, 2015, 91 (20)

[9] INFLUENCE OF TEMPERATURE AND PRESSURE ON THE ELECTRONIC-TRANSITIONS IN SNS AND SNSE SEMICONDUCTORS [J].

PARENTEAU, M ;

CARLONE, C .

PHYSICAL REVIEW B, 1990, 41 (08) :5227-5234

[10] Grain Structure Induced Thermoelectric Properties in PbTe Nanocomposites [J].

Paul, Biplab ;

Banerji, Palllab .

NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2009, 1 (03) :208-212

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