Sub-milliwatt power III-N light emitting diodes at 285 nm

被引：78

作者：

Adivarahan, V ^{[1
]}

Zhang, JP ^{[1
]}

Chitnis, A ^{[1
]}

Shuai, W ^{[1
]}

Sun, J ^{[1
]}

Pachipulusu, R ^{[1
]}

Shatalov, M ^{[1
]}

Khan, MA ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2002年 / 41卷 / 4B期

关键词：

UV LED; MQW; buffer; strain relief; AlGaN;

D O I：

10.1143/JJAP.41.L435

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using low defect density n(+)-Al0.4Ga0.6N buffer layers we fabricated AlGaN p-n junction light emitting diodes over sapphire substrates with peak emission at 285 nm. Powers as high as 0.15 mW were measured at 400 mA pulse pumping.

引用

页码：L435 / L436

页数：2

共 6 条

[1]

CHITNIS A, 2001, IN PRESS JPN J APPL, V41

[2]

Iwaya M, 2001, PHYS STATUS SOLIDI A, V188, P117, DOI 10.1002/1521-396X(200111)188:1<117::AID-PSSA117>3.0.CO

[3]

2-X

[4] Stripe geometry ultraviolet light emitting diodes at 305 nanometers using quaternary AlInGaN multiple quantum wells [J].

Khan, MA ;

Adivarahan, V ;

Zhang, JP ;

Chen, CQ ;

Kuokstis, E ;

Chitnis, A ;

Shatalov, M ;

Yang, JW ;

Simin, G .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (12A) :L1308-L1310

[5] Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN [J].

Nishida, T ;

Saito, H ;

Kobayashi, N .

APPLIED PHYSICS LETTERS, 2001, 79 (06) :711-712

[6]

WANG HM, UNPUB APPL PHYS LETT

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