Stripe geometry ultraviolet light emitting diodes at 305 nanometers using quaternary AlInGaN multiple quantum wells

被引：62

作者：

Khan, MA ^{[1
]}

Adivarahan, V ^{[1
]}

Zhang, JP ^{[1
]}

Chen, CQ ^{[1
]}

Kuokstis, E ^{[1
]}

Chitnis, A ^{[1
]}

Shatalov, M ^{[1
]}

Yang, JW ^{[1
]}

Simin, G ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2001年 / 40卷 / 12A期

关键词：

quaternary; AlInGaN; MQW; UV LED;

D O I：

10.1143/JJAP.40.L1308

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An ultraviolet light emitting diode with quaternary AlInGaN/AlInGaN multiple quantum wells and peak emission wavelength at 305 nanometers (nm) is reported for the first time. The peak emission wavelength call be tuned front 305 nm to 340 nm by varying the allow compositions of the quaternary AlInGaN active layers using a Pulse atomic layer epitaxy process. At 340 nm, for a 20 /ml x 1000 mum stripe geometry device an output power as high as 1 mW was measured from the sapphire substrate side.

引用

页码：L1308 / L1310

页数：3

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