Lattice and energy band engineering in AlInGaN/GaN heterostructures

被引：149

作者：

Khan, MA ^{[1
]}

Yang, JW

Simin, G

Gaska, R

Shur, MS

zur Loye, HC

Tamulaitis, G

Zukauskas, A

Smith, DJ

Chandrasekhar, D

Bicknell-Tassius, R

机构：

[1] Univ S Carolina, Dept Elect & Comp Engn, Columbia, SC 29208 USA

[2] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

[3] Univ S Carolina, Dept Chem & Biochem, Columbia, SC 29208 USA

[4] Vilnius State Univ, Inst Mat Sci & Appl Res, Vilnius, Lithuania

[5] Arizona State Univ, Ctr Solid State Sci, Ctr High Resolut Electron Microscopy, Tempe, AZ 85287 USA

[6] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 09期

关键词：

D O I：

10.1063/1.125970

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on structural, optical, and electrical properties of AlxInyGa1-x-yNGaN heterostructures grown on sapphire and 6H-SiC substrates. Our results demonstrate that incorporation of In reduces the lattice mismatch, Delta a, between AlInGaN and GaN, and that an In to Al ratio of close to 1:5 results in nearly strain-free heterostructures. The observed reduction in band gap, Delta E-g, determined from photoluminescence measurements, is more than 1.5 times higher than estimated from the linear dependencies of Delta a and Delta E-g on the In molar fraction. The incorporation of In and resulting changes in the built-in strain in AlInGaN/GaN heterostructures strongly affect the transport properties of the two-dimensional electron gas at the heterointerface. The obtained results demonstrate the potential of strain energy band engineering for GaN-based electronic applications. (C) 2000 American Institute of Physics. [S0003-6951(00)03909-7].

引用

页码：1161 / 1163

页数：3

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