Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries

被引：42

作者：

Cojocaru-Miredin, Oana ^{[1
]}

Schwarz, Torsten ^{[1
]}

Choi, Pyuck-Pa ^{[1
]}

Herbig, Michael ^{[1
]}

Wuerz, Roland ^{[2
]}

Raabe, Dierk ^{[1
]}

机构：

[1] Max Planck Inst Eisenforsch GmbH, Dept Microstruct Phys & Alloy Design, Dusseldorf, Germany

[2] Zentrum Sonnenenergie & Wasserstoff Forsch Baden, Stuttgart, Germany

来源：

JOVE-JOURNAL OF VISUALIZED EXPERIMENTS | 2013年 / 74期

关键词：

Physics; Issue; 74; Chemistry; field theory (physics); crystallography; semiconductor materials; solid state physics; condensed matter physics; thin films (theory; deposition and growth); crystal defects; crystal structure (semiconductors); Thin-film solar cells; Cu(In; Ga)Se-2; grain boundary segregation; pulsed laser atom probe tomography; transmission electron microscopy; TEM; electron backscatter diffraction; atom probe tomography; APT; SEM; imaging; SPECIMEN PREPARATION; CUINSE2; SODIUM; FILMS;

D O I：

10.3791/50376

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Compared with the existent techniques, atom probe tomography is a unique technique able to chemically characterize the internal interfaces at the nanoscale and in three dimensions. Indeed, APT possesses high sensitivity (in the order of ppm) and high spatial resolution (sub nm). Considerable efforts were done here to prepare an APT tip which contains the desired grain boundary with a known structure. Indeed, sitespecific sample preparation using combined focused-ion-beam, electron backscatter diffraction, and transmission electron microscopy is presented in this work. This method allows selected grain boundaries with a known structure and location in Cu(In, Ga)Se-2 thin-films to be studied by atom probe tomography. Finally, we discuss the advantages and drawbacks of using the atom probe tomography technique to study the grain boundaries in Cu(In,Ga)Se-2 thin-film solar cells.

引用

页数：7

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