Grain-boundary types in chalcopyrite-type thin films and their correlations with film texture and electrical properties

被引：39

作者：

Abou-Ras, D. ^{[1
]}

Koch, C. T. ^{[2
]}

Kuestner, V. ^{[2
]}

van Aken, P. A. ^{[2
]}

Jahn, U. ^{[3
]}

Contreras, M. A. ^{[4
]}

Caballero, R. ^{[1
]}

Kaufmann, C. A. ^{[1
]}

Scheer, R. ^{[1
]}

Unold, T. ^{[1
]}

Schock, H. -W. ^{[1
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany

[2] Max Planck Inst Met Res, D-70569 Stuttgart, Germany

[3] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

[4] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 07期

关键词：

Cu(In; Ga)Se-2; CuInS2; Chalcopyrite-type; Thin film solar cells; Grain boundary types; Texture; EBSD; Cathodoluminescence; In-line electron holography; SOLAR-CELLS;

D O I：

10.1016/j.tsf.2008.11.044

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Grain boundaries in chalcopyrite-type thin films can be divided into (near) Sigma 3 (twin) and random boundaries. it is shown that Sigma 3 grain boundaries in a 110/201-textured Cu(In,Ga)Se-2 film may exhibit a preferential orientation perpendicular to the substrate, however, that this preferential orientation is not a common feature in 110/201-textured films. In general, it is not possible to draw conclusions about the Cu(In, Ga)Se-2 thin-film microstructure based on its texture and vice versa. From cathodoluminescence and electron backscatter diffraction measurements acquired on the same area of a CuInS2 cross-section sample, it is concluded that the density of non-radiating recombination centers at random boundaries is substantially larger than that at Sigma 3 (twin) boundaries. Evaluation of reconstructed phase images from transmission electron microscopy focus series revealed considerably larger mean-inner potential wells at a random boundary as compared with Sigma 3 (twin) boundaries. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2545 / 2549

页数：5

共 25 条

[1] Grain-size distributions and grain boundaries of chalcopyrite-type thin films [J].

Abou-Ras, D. ;

Schorr, S. ;

Schock, H. W. .

JOURNAL OF APPLIED CRYSTALLOGRAPHY, 2007, 40 :841-848

[2]

Abou-Ras D, 2007, PHYS STATUS SOLIDI-R, V1, P187, DOI [10.1002/pssr.200701137, 10.1002/pssr.2007Q1137]

[3] Projected potential profiles across interfaces obtained by reconstructing the exit face wave function from through focal series [J].

Bhattacharyya, Somnath ;

Koch, Christoph T. ;

Ruehle, Manfred .

ULTRAMICROSCOPY, 2006, 106 (06) :525-538

[4] Effect of Cu excess on three-stage CuGaSe2 thin films using in-situ process controls [J].

Caballero, R. ;

Siebentritt, S. ;

Sakurai, K. ;

Kaufmann, C. A. ;

Schock, H. W. ;

Lux-Steiner, M. Ch. .

THIN SOLID FILMS, 2007, 515 (15) :5862-5866

[5]

CONTRERAS MA, 1994, IEEE PHOT SPEC CONF, P68, DOI 10.1109/WCPEC.1994.519811

[6] Grain-boundary recombination in Cu(In,Ga)Se2 solar cells -: art. no. 113704 [J].

Gloeckler, M ;

Sites, JR ;

Metzger, WK .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (11)

[7] COINCIDENCE-SITE LATTICES AND COMPLETE PATTERN-SHIFT LATTICES IN CUBIC-CRYSTALS [J].

GRIMMER, H ;

BOLLMANN, W ;

WARRINGTON, DH .

ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 1974, A 30 (MAR) :197-207

[8] Texture and electronic activity of grain boundaries in Cu(In,Ga)Se2 thin films [J].

Hanna, G ;

Glatzel, T ;

Sadewasser, S ;

Ott, N ;

Strunk, HP ;

Rau, U ;

Werner, JH .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2006, 82 (01) :1-7

[9] Direct observation of copper depletion and potential changes at copper indium gallium diselenide grain boundaries [J].

Hetzer, MJ ;

Strzhemechny, YM ;

Gao, M ;

Contreras, MA ;

Zunger, A ;

Brillson, LJ .

APPLIED PHYSICS LETTERS, 2005, 86 (16) :1-3

[10]

ISHIZUKA S, 2004, P 19 EUR PHOT SOL EN, P1729

← 1 2 3 →