Abnormal charge injection behavior at metal-organic interfaces

被引:19
作者
Wang, Z. B. [1 ]
Helander, M. G. [1 ]
Tsang, S. W. [1 ]
Lu, Z. H. [1 ]
机构
[1] Univ Toronto, Dept Mat Sci & Engn, Toronto, ON M5S 3E4, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
charge injection; electrical conductivity; interface states; metal-insulator boundaries; tunnelling;
D O I
10.1103/PhysRevB.78.193303
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Charge injection physics at metal-organic interfaces with barrier heights of 0.6-1.5 eV has been systematically studied. It is discovered that for sufficiently high barriers the injection current becomes temperature independent. The phenomenon contradicts the orthodox charge injection theory that predicts a simple exponential temperature dependence of charge injection. To explain the observed experimental results, tunneling injection via interfacial traps is proposed. The relative impact of various parameters such as trap density, energy level, and energy disorder is studied. The theoretical calculations indicate that interfacial deep traps, even of trivial amount, will have a huge impact on charge injection at various temperatures. Therefore trap states at the interface should be considered whenever barrier height is to be extracted from I-V curves at various temperatures.
引用
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页数:4
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