IIIB- nitride semiconductors for high temperature electronic applications

被引：18

作者：

Bai, X ^{[1
]}

Hill, DM ^{[1
]}

Kordesch, ME ^{[1
]}

机构：

[1] Ohio Univ, Dept Phys & Astron, Athens, OH 45701 USA

来源：

WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999 | 1999年 / 572卷

关键词：

D O I：

10.1557/PROC-572-529

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of ScN and YN were grown on silicon, quartz and sapphire using metal evaporation and an RF atomic nitrogen source. YN decomposes on contact with water vapor, and only AlN capped films could be stabilized. ScN is stable in air and water, and thin films of this material deposited at temperatures between 300 and 900 degrees C show a substrate-dependent film texture. Typical growth rates were - 0.1 nm/second with a 300W N discharge at about 0.1 mTorr Nitrogen pressure. Structural characterization by x-ray diffraction, infrared transmission spectroscopy and Hall effect measurements on n-type ScN and the fabrication of p-n junctions of n- type ScN with silicon are presented.

引用

页码：529 / 534

页数：6

共 7 条

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[2] Microstructure and electronic properties of the refractory semiconductor ScN grown on Mg0(001) by ultra-high-vacuum reactive magnetron sputter deposition [J].