Low-voltage polymer thin-film transistors with a self-assembled monolayer as the gate dielectric

被引:64
作者
Park, YD [1 ]
Kim, DH [1 ]
Jang, Y [1 ]
Hwang, M [1 ]
Lim, JA [1 ]
Cho, K [1 ]
机构
[1] Pohang Univ Sci & Technol, Dept Chem Engn, Pohang 790784, South Korea
基金
欧洲研究理事会;
关键词
D O I
10.1063/1.2143113
中图分类号
O59 [应用物理学];
学科分类号
摘要
By a simple process, we manufactured polymer thin-film transistors (PTFTs) using a 2.6 nm thick self-assembled monolayer (SAM) of alkyl chains as the gate dielectric to reduce the operating voltage of the device. These manufactured PTFTs operate with supply voltages of less than 2 V. A densely packed SAM of docosyltrichlorosilanes (DCTS) was a very efficient insulating barrier due to the very limited penetration of polymer transistor molecules into the SAM insulator. The present results show that a DCTS monolayer is suitable for use as a gate dielectric. These results enhance the prospects of using polymer TFTs with a SAM gate dielectric in low-power applications such as identification tags.
引用
收藏
页码:1 / 3
页数:3
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