Surface reconstructions of 3C-SiC(001) studied by high-resolution core-level photoemission

The different surface reconstructions of the 3C-SiC(001) surface have been systematically studied by high-resolution core-level photoelectron spectroscopy. For the Si-rich 3 x 2 surface, three different Si 2p surface components are clearly identified supporting the structure model with 2/3 ML of Si ad-dimers. It is confirmed that the c(2 x 2) and 2 x 1 surfaces are respectively C- and Si-terminated by observing a single dominant surface component in the C 1s or Si 2p spectra with binding energy shifts of 1.04 eV and -0.50 eV respectively relative to the bulk component. The atomic origins of these surface core levels are assigned and the core-level shifts are compared with previous measurements and recent theoretical calculations. (C) 1999 Elsevier Science B.V. All rights reserved.