Surface sensitivity of X-ray photoelectron spectroscopy

被引:169
作者
Powell, C. J. [1 ]
Jablonski, A. [2 ]
机构
[1] NIST, Surface & Microanal Sci Div, Gaithersburg, MD 20899 USA
[2] Polish Acad Sci, Inst Phys Chem, PL-01224 Warsaw, Poland
关键词
Effective attenuation length; Inelastic mean free path; Mean escape depth; Surface sensitivity; X-ray photoelectron spectroscopy; MEAN FREE PATHS; AUGER-ELECTRON-SPECTROSCOPY; EFFECTIVE ATTENUATION LENGTHS; ELASTIC-SCATTERING CORRECTIONS; DIOXIDE FILM THICKNESSES; LOW-ENERGY ELECTRONS; SILICON DIOXIDE; EXCITATION PARAMETER; ELEMENTAL SOLIDS; THEORETICAL DETERMINATION;
D O I
10.1016/j.nima.2008.12.103
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We give an overview of four terms (the inelastic mean free path (IMFP), the effective attenuation length (EAL), the mean escape depth (MED), and the information depth (ID)) that are frequently used (and sometimes misused) in statements on the surface sensitivity of X-ray photoelectron spectroscopy. We give definitions of each term and show how each term is intended for different applications. Misunderstanding of these terms often arises when the complicating effects of elastic scattering of the signal electrons are overlooked. As a result, numerical values of the IMFP EAL, and MED for a given material and electron energy will generally be different. Values of the EAL, MED, and ID will also depend on the elastic-scattering properties of the sample and the experimental configuration. We give information on sources of data for IMFPs, EALs, and MEDs, and present simple analytical expressions from which EALs, MEDs, and IDs can be determined. Published by Elsevier B.V.
引用
收藏
页码:54 / 65
页数:12
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