Ionic conductivity of AgI film on the SiO2 glass substrate

被引：8

作者：

Furusawa, S ^{[1
]}

Kawaguchi, T ^{[1
]}

机构：

[1] Gunma Univ, Fac Engn, Dept Elect Engn, Kiryu, Gumma 3768515, Japan

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 2001年 / 70卷 / 12期

关键词：

AgI; thin film; ionic conductivity; interface; SiO2 glass substrate;

D O I：

10.1143/JPSJ.70.3585

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The temperature dependence of ionic conductivity of the AgI films on SiO2 glass (quartz grass) substrates has been measured for various film thickness. AgI thin films showed conductivity enhancement, and the ionic conductivity shows an increase with decreasing the thickness. The experimental results suggest the existence of the high ionic conduction region at the SiO2-AgI boundary. The thickness dependence of ionic conductivity of the AgI film was explained by a simple two layer model; high ionic conduction region and bulk ionic conduction region. Average ionic conductivity sigma (lambda) and thickness lambda of the high ionic conduction region at 300 K were estimated as 4.65 x 10(-5) Omega (-1) cm(-1) and 0.28 mum, respectively.

引用

页码：3585 / 3590

页数：6

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