The effect of nitrogen addition to Ar/CH4 plasmas on the growth, morphology and field emission of ultrananocrystalline diamond

被引：123

作者：

Corrigan, TD

Gruen, DM

Krauss, AR

Zapol, P

Chang, RPH

机构：

[1] Argonne Natl Lab, Div Sci Mat, Argonne, IL 60439 USA

[2] Argonne Natl Lab, Div Chem, Argonne, IL 60439 USA

[3] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

来源：

关键词：

nitrogen; plasma; ultrananocrystalline diamond;

D O I：

10.1016/S0925-9635(01)00517-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of the addition of nitrogen to plasmas during the CVD growth of diamond films on field emission properties has been studied. Ultrananocrystalline diamond with 5-15 nm grain size has been grown with the incorporation of nitrogen up to 8 x 10(20) atoms/cm(3). Field emission onsets as low as 2 V/mum have been achieved. UV Raman and electron energy loss spectroscopy (EELS) measurements show an increase in the sp(2) content in the films with nitrogen in the plasma compared to films without N-2 addition. A model is discussed in which the nitrogen preferentially enters the grain boundaries and promotes sp(2) bonding in the neighboring carbon atoms. The increase in the sp(2) content appears to improve the field emission properties of the films. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：43 / 48

页数：6

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