COMPENSATION EFFECTS IN NITROGEN-DOPED DIAMOND THIN-FILMS

被引：82

作者：

MORT, J

MACHONKIN, MA

OKUMURA, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 24期

关键词：

D O I：

10.1063/1.105767

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Diamond thin films have been doped with nitrogen during growth by the hot-filament technique. For nitrogen concentrations in the films, determined by quantitative secondary ion-mass spectroscopy (SIMS) exceeding about 3 X 10(18) atoms/cc, a decrease of several orders of magnitude is observed in the electrical conductivity for temperatures at or above room temperature. Qualitatively, this decrease is as expected, assuming compensation of existing acceptor states in nominally undoped diamond thin films by substitutional nitrogen which is known to introduce a deep-lying donor level.

引用

页码：3148 / 3150

页数：3

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