Crystal growth of aluminum nitride under high pressure of nitrogen

被引：36

作者：

Bockowski, M ^{[1
]}

Wróblewski, M ^{[1
]}

Lucznik, B ^{[1
]}

Grzegory, I ^{[1
]}

机构：

[1] High Pressure Res Ctr, PL-01142 Warsaw, Poland

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2001年 / 4卷 / 06期

关键词：

AlN; crystals growth from solution; high nitrogen pressure solution growth (HNPSG) method; high pressure;

D O I：

10.1016/S1369-8001(02)00014-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the results of AlN crystal growth at high nitrogen pressure of the order of I GPa and temperatures up to 2000 K. Both, needle-like and bulk form of AlN single crystals up to I cm and I mm, respectively, have been obtained. We discuss the influence of temperature and supersaturation on the habit and morphology of AlN crystals. The crystals were characterized by X-ray diffraction method, scanning electron microscopy (SEM) and energy dispersive X-ray analyser attached to SEM. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：543 / 548

页数：6

共 13 条

[1]

Bockowski M, 1997, J MATER SYNTH PROCES, V5, P449

[2]

BOCKOWSKI M, 1994, CERAM ACTA, V6, P33

[3]

Elwell D., 1975, CRYSTAL GROWTH HIGH

[4]

Grzegory I, 1996, MRS INTERNET J N S R, V1, pU155

[5]

POROWSKI S, 1999, MRS INTERNET J NITRI, V4

[6]

POROWSKI S, 1994, PROPERTIES GROUP 3 N, P71

[7]

POROWSKI S, 1989, HIGH PRESSURE CHEM S, P21

[8] Epitaxial growth of AlN and Al0.5Ca0.5N layers on aluminum nitride substrates [J].

Schowalter, LJ ;

Rojo, JC ;

Slack, GA ;

Shusterman, Y ;

Wang, R ;

Bhat, I ;

Arunmozhi, G .

JOURNAL OF CRYSTAL GROWTH, 2000, 211 (1-4) :78-81

[9] Growth of AlN single crystals [J].

Slack, GA .

WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE, 1998, 512 :35-40

[10] GROWTH OF HIGH-PURITY AIN CRYSTALS [J].

SLACK, GA ;

MCNELLY, TF .

JOURNAL OF CRYSTAL GROWTH, 1976, 34 (02) :263-279

← 1 2 →