Epitaxial growth of AlN and Al0.5Ca0.5N layers on aluminum nitride substrates

被引：21

作者：

Schowalter, LJ ^{[1
]}

Rojo, JC

Slack, GA

Shusterman, Y

Wang, R

Bhat, I

Arunmozhi, G

机构：

[1] Rensselaer Polytech Inst, Phys Appl Phys & Astron Dept, Troy, NY 12180 USA

[2] Crystal IS Inc, Latham, NY 12110 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 211卷 / 1-4期

关键词：

III-nitrides; aluminum nitride; epitaxy; gallium nitride; crystal growth;

D O I：

10.1016/S0022-0248(99)00778-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

High-quality epitaxial A1N and AlxGa1-xN layers have been grown by organo-metallic vapor-phase epitaxy (OMVPE) on single-crystal A1N substrates. Here we report the characterization of these layers on a-face substrates using Rutherford backscattering/ion channeling spectroscopy (RBS), atomic force microscopy (AFM), double-crystal X-ray diffraction (XRD), and preliminary electrical results. ion channeling along the [1 1 (2) over bar 0] axis gave a minimum yield of 1.5% for an AIN layer and 2.2% for an Al0.5Ga0.5N, indicating excellent crystal quality. A resistivity of 20 Omega cm and a mobility of 20 cm(2)/V s was measured in a Si-doped, 1 mu m-thick, epitaxial Al0.5Ga0.5N grown epitaxially on the A1N substrates. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：78 / 81

页数：4

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