GROWTH OF ALXGA1-XN-GE ON SAPPHIRE AND SILICON SUBSTRATES

被引：88

作者：

ZHANG, X

KUNG, P

SAXLER, A

WALKER, D

WANG, TC

RAZEGHI, M

机构：

[1] Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston

[2] Wright Laboratory/Materials Directorate, Wright Patterson AFB

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 12期

关键词：

D O I：

10.1063/1.115036

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlxGa1-xN were grown on (00.1) sapphire and (111) silicon substrates in the whole composition range (0 less than or equal to x less than or equal to 1). The high optical quality of the epilayers was assessed by room-temperature optical absorption and photoluminescence measurements. Layers with higher Al composition are more resistive. Resistive AlxGa1-x,N epilayers were successfully doped with Ge and free-electron concentration as high as 3 x 10(19) cm(-3) was achieved. (C) 1995 American Institute of Physics.

引用

页码：1745 / 1747

页数：3

共 10 条

[1] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS
[2] GROWTH AND PROPERTIES OF GAXAL1-XN COMPOUNDS
HAGEN, J
METCALFE, RD
WICKENDEN, D
CLARK, W
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (04): : L143 - L146
[3] ENERGY BAND-GAP BOWING PARAMETER IN AN ALXGA1-XN ALLOY
KOIDE, Y
ITOH, H
KHAN, MRH
HIRAMATU, K
SAWAKI, N
AKASAKI, I
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (09) : 4540 - 4543
[4] HIGH-QUALITY ALN AND GAN EPILAYERS GROWN ON (00.1) SAPPHIRE, (100), AND (111) SILICON SUBSTRATES
KUNG, P
SAXLER, A
ZHANG, X
WALKER, D
WANG, TC
FERGUSON, I
RAZEGHI, M
[J]. APPLIED PHYSICS LETTERS, 1995, 66 (22) : 2958 - 2960
[5] GROWTH OF SI-DOPED ALXGA1-XN ON (0001) SAPPHIRE SUBSTRATE BY METALORGANIC VAPOR-PHASE EPITAXY
MURAKAMI, H
ASAHI, T
AMANO, H
HIRAMATSU, K
SAWAKI, N
AKASAKI, I
[J]. JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) : 648 - 651
[6] Pankove JI., 1975, OPTICAL PROCESSES SE
[7] HIGH-QUALITY ALUMINUM NITRIDE EPITAXIAL LAYERS GROWN ON SAPPHIRE SUBSTRATES
SAXLER, A
KUNG, P
SUN, CJ
BIGAN, E
RAZEGHI, M
[J]. APPLIED PHYSICS LETTERS, 1994, 64 (03) : 339 - 341
[8] COMPARISON OF THE PHYSICAL-PROPERTIES OF GAN THIN-FILMS DEPOSITED ON (0001) AND (0112) SAPPHIRE SUBSTRATES
SUN, CJ
RAZEGHI, M
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (07) : 973 - 975
[9] SUN CJ, 1993, I PHYS C SER, V137, P425
[10] PROPERTIES OF ALXGA1-XN FILMS PREPARED BY REACTIVE MOLECULAR-BEAM EPITAXY
YOSHIDA, S
MISAWA, S
GONDA, S
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6844 - 6848

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