The physics of macropore formation in low-doped p-type silicon

被引：213

作者：

Lehmann, V ^{[1
]}

Rönnebeck, S

机构：

[1] Siemens AG, D-81730 Munich, Germany

[2] Univ Kiel, Fac Engn, D-24143 Kiel, Germany

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1999年 / 146卷 / 08期

关键词：

D O I：

10.1149/1.1392037

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The dependence of the morphology of macropores in p-type silicon electrodes on formation parameters such as substrate doping density, electrolyte composition, and applied current density is investigated. The results are compared with the well-understood case of electrochemical macropore formation on n-type silicon electrodes. A growth model is derived in which pore formation is shown to be a consequence of charge-transfer mechanisms in a Schottky diode applied to a nonplanar interface. (C) 1999 The Electrochemical Society. S0013-4651(98)11-103-5. All rights reserved.

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页码：2968 / 2975

页数：8

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