Crystal orientation dependence of macropore growth in n-type silicon

被引：63

作者：

Rönnebeck, S ^{[1
]}

Carstensen, J ^{[1
]}

Ottow, S ^{[1
]}

Föll, H ^{[1
]}

机构：

[1] Univ Kiel, Fac Engn, D-24143 Kiel, Germany

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 1999年 / 2卷 / 03期

关键词：

D O I：

10.1149/1.1390756

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The dependence of macropore formation in n-silicon on substrate orientation was investigated. Samples were cut from a large Si crystal in various orientations between {100} and {111}. Macropores were obtained by electrochemical etching in diluted HF following standard techniques. The growth direction of the macropores was found to be <100> and <113>, with a switch over at a critical angle of about 43 degrees, whereas "break-through" pores obtained without illumination at large field strength always grow in <100>. The results can be partially understood by postulating different pore growth speeds for <100> and <113>, but indicate that a detailed understanding of pore growth in Si is still elusive. (C) 1999 The Electrochemical Society. S1099-0062(98)09-062-2. All rights reserved.

引用

页码：126 / 128

页数：3

共 26 条

[1] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].