Photoconductivity of intrinsic graphene

被引:77
作者
Vasko, F. T. [1 ,2 ]
Ryzhii, V. [2 ,3 ]
机构
[1] NAS Ukraine, Inst Semicond Phys, UA-03028 Kiev, Ukraine
[2] Univ ofAizu, Aizu Wakamatsu 9658580, Japan
[3] CREST, Japan Sci & Technol Agcy, Tokyo 1070075, Japan
来源
PHYSICAL REVIEW B | 2008年 / 77卷 / 19期
关键词
D O I
10.1103/PhysRevB.77.195433
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We examine the photoconductivity of an intrinsic graphene associated with far- and midinfrared irradiation at low temperatures. The model under consideration accounts for the excitation of the electron-hole pairs by incident radiation, the interband generation-recombination transitions due to thermal radiation, and the intraband energy relaxation due to acoustic phonon scattering. The momentum relaxation is assumed to be caused by elastic scattering. The pertinent collision integrals are adapted for the case of the massless energy spectrum of carriers that interact with the longitudinal acoustic mode and the thermal radiation. It is found that the photoconductivity is determined by interplay between weak energy relaxation and generation-recombination processes. Due to this, the threshold of nonlinear response is fairly low.
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页数:8
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