GaAs nanocrystals formed by sequential ion implantation

被引：62

作者：

White, CW

Budai, JD

Zhu, JG

Withrow, SP

Zuhr, RA

Hembree, DM

Henderson, DO

Ueda, A

Tung, YS

Mu, R

Magruder, RH

机构：

[1] OAK RIDGE Y-12 PLANT,OAK RIDGE,TN 37831

[2] FISK UNIV,NASHVILLE,TN 37208

[3] VANDERBILT UNIV,NASHVILLE,TN 37235

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 04期

关键词：

D O I：

10.1063/1.361088

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Sequential ion implantation of As and Ga into SiO2 and alpha-Al2O3 followed by thermal annealing has been used to form zinc-blende GaAs nanocrystals in these two matrices. In SiO2, the nanocrystals are nearly spherical and randomly oriented, with diameters less than 15 nm. In Al2O3, the nanocrystals are three dimensionally aligned with respect to the crystal lattice. Infrared reflectance measurements show evidence for surface phonon modes in the GaAs nanocrystals in these matrices. (C) 1996 American Institute of Physics.

引用

页码：1876 / 1880

页数：5

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