Nanostructure Engineering and Doping of Conjugated Carbon Nitride Semiconductors for Hydrogen Photosynthesis

被引:785
作者
Lin, Zhenzhen [1 ,2 ]
Wang, Xinchen [1 ,2 ]
机构
[1] Fuzhou Univ, Res Inst Photocatalysis, Fujian Prov Key Lab Photocatalysis, State Key Lab Breeding Base, Fuzhou 350002, Peoples R China
[2] Fuzhou Univ, Coll Chem & Chem Engn, Fuzhou 350002, Peoples R China
基金
中国国家自然科学基金;
关键词
carbon nitride; conjugated polymers; doping; nanosheets; photosynthesis; FRUSTRATED LEWIS PAIRS; POLYMERS; BORON; ACTIVATION; EVOLUTION; OXIDATION; GRAPHENE;
D O I
10.1002/anie.201209017
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Going flat out: Simultaneous modifications of the textural, surface, and electronic structures of a rigid conjugated carbon nitride polymer has been achieved using direct co-condensation of urea and Ph4BNa. This method gives boron-doped carbon nitride nanosheets (see picture) that optimize the capture of light, improve the charge-separation kinetics, and enhance the surface reactivity for hydrogen photosynthesis. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:1735 / 1738
页数:4
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