A new transparent conducting oxide in the Ga2O3-In2O3-SnO2 system

被引：168

作者：

Edwards, DD

Mason, TO

Goutenoire, F

Poeppelmeier, KR

机构：

[1] NORTHWESTERN UNIV,CTR MAT RES,EVANSTON,IL 60208

[2] NORTHWESTERN UNIV,DEPT CHEM,EVANSTON,IL 60208

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 13期

关键词：

D O I：

10.1063/1.118676

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new transparent conducting oxide (TCO), which can be expressed as Ga3-xIn5+xSn2O16; 0.2 less than or equal to x less than or equal to 1.6, has been identified. The equilibrium phase relationships of this new material with respect to three other TCOs in Ga2O3-In2O3-SnO2 are reported. The optical properties of this phase are slightly superior to Sn-doped indium oxide (ITO) and depend on composition. A room-temperature conductivity of 375 Omega cm(-1) was obtained for H-2-reduced Ga2.4In5.6Sn2O16. This value is an order of magnitude lower than commercial ITO films, but comparable to values reported for bulk, polycrystalline Sn-doped In2O3. (C) 1997 American Institute of Physics.

引用

页码：1706 / 1708

页数：3

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