Effects of processing conditions on the dielectric properties of CaCu3Ti4O12

There have been a number of recent reports of anomalously large permittivities (epsilon(r) approximate to 10(4)) in the material CaCu3Ti4O12. The dielectric spectra is characterized by a large, relatively temperature independent permittivity near room temperature which exhibits a dielectric relaxation above 100 K. The crystal structure of CaCu3Ti4O12 can be described as pseudo-perovskite with a cubic unit cell with a lattice constant of 7.391 angstrom. The ubiquitous occurrence of this dielectric behavior in ceramics, single crystals, and thin films suggests that the polarization is not related to a simple conducting grain/insulating grain boundary-type system. While the precise origin of the dielectric response is not entirely clear, in this work it is shown that processing conditions have a significant influence on the room temperature dielectric properties. Specifically, the permittivity and loss exhibit a strong dependence on the oxygen partial pressure and sintering time. In fact, studies of the effects of sintering time and supporting evidence from capacitance-voltage measurements conclusively show that there is no direct relationship between the permittivity and grain size, as is the case in classical boundary layer systems. Lastly, with aliovalent doping the room temperature dielectric properties can be optimized to provide a high permittivity (epsilon(r) similar to 8,000) dielectric with relatively low loss (tan delta < 0.05 at 1 kHz).