Interaction of HfO2/SiO2/Si structures with deuterium gas -: art. no. 041918

被引：11

作者：

Driemeier, C

Miotti, L

Baumvol, IJR

Radtke, C

Gusev, EP

Kim, MJ

Wallace, RM

机构：

[1] Univ Fed Rio Grande do Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil

[2] Univ Caxias Sul, CCET, BR-91501970 Porto Alegre, RS, Brazil

[3] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[4] Univ Texas, Dept Elect Engn & Phys, Richardson, TX 75080 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 04期

关键词：

D O I：

10.1063/1.2168501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

HfO2 films (2.5 to 12 nm) deposited on thermal SiO2 (1.5 nm) on Si were annealed in deuterium gas at 400-600 degrees C and incorporated D amounts were quantified using the D(He-3,p)He-4 nuclear reaction. We found similar to 10(13) D cm(-2) in the SiO2 interlayer region and up to 2.2x10(14) D cm(-2) near the HfO2 surface, whereas D amounts in the bulk of the HfO2 films were determined to be below 10(13) cm(-2). However, analyses employing the H-1(N-15,alpha gamma)C-12 nuclear resonant reaction showed much more spurious H present in the bulk of HfO2 films. Mechanisms of D incorporation and desorption as well as contribution of the present results to the understanding of HfO2-based devices are discussed. (c) 2006 American Institute of Physics.

引用

页码：1 / 3

页数：3

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