Passivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacks

被引：109

作者：

Carter, RJ

Cartier, E

Kerber, A

Pantisano, L

Schram, T

De Gendt, S

Heyns, M

机构：

[1] IMEC VZW, B-3001 Louvain, Belgium

[2] IMEC, Int Sematech Assignee, Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 03期

关键词：

D O I：

10.1063/1.1592639

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate that a forming gas annealing temperature of 520 degreesC significantly improves interface state passivation for SiO2/HfO2-based/polycrystalline-Si gate stacks as compared to annealing at 420 degreesC normally used for SiO2/polycrystalline-Si gate stacks. We also show that the initial interface state density is dependent upon the interfacial SiO2 preparation, whereby a chemically grown oxide has a higher initial interface state density as compared to a thermally grown oxide. (C) 2003 American Institute of Physics.

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页码：533 / 535

页数：3

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