ELECTRICAL CHARACTERISTICS OF MOSFETS USING LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED OXIDE

[1] Abe H., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P372

[2] LOW-TEMPERATURE DEPOSITION OF HIGH-QUALITY SILICON DIOXIDE BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) : 3136 - 3145

[3] ELECTRICAL CHARACTERISTICS OF VERY THIN SIO2 DEPOSITED AT LOW SUBSTRATE TEMPERATURES [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (04) : 148 - 150

[4] A 2-STEP OXIDATION PROCESS TO IMPROVE THE ELECTRICAL BREAKDOWN PROPERTIES OF THIN OXIDES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : 1900 - 1903

[5] HOLE TRAPPING AND BREAKDOWN IN THIN SIO2 [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) : 164 - 167

[6] HARARI E, 1977, J APPL PHYS, V48, P5217

[7] COMPARISON BETWEEN CVD AND THERMAL OXIDE DIELECTRIC INTEGRITY [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) : 506 - 509

[8] LEE J, 1988, MAY S VLSI TECHN SAN

[9] LIANG MS, 1981, DEC IEDM, P396

[10] ELECTRON-MOBILITY IN INVERSION AND ACCUMULATION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1497 - 1508

[1] Abe H., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P372

[2] LOW-TEMPERATURE DEPOSITION OF HIGH-QUALITY SILICON DIOXIDE BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) : 3136 - 3145

[3] ELECTRICAL CHARACTERISTICS OF VERY THIN SIO2 DEPOSITED AT LOW SUBSTRATE TEMPERATURES [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (04) : 148 - 150

[4] A 2-STEP OXIDATION PROCESS TO IMPROVE THE ELECTRICAL BREAKDOWN PROPERTIES OF THIN OXIDES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : 1900 - 1903

[5] HOLE TRAPPING AND BREAKDOWN IN THIN SIO2 [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) : 164 - 167

[6] HARARI E, 1977, J APPL PHYS, V48, P5217

[7] COMPARISON BETWEEN CVD AND THERMAL OXIDE DIELECTRIC INTEGRITY [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) : 506 - 509

[8] LEE J, 1988, MAY S VLSI TECHN SAN

[9] LIANG MS, 1981, DEC IEDM, P396

[10] ELECTRON-MOBILITY IN INVERSION AND ACCUMULATION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1497 - 1508