High temperature stability of Al2O3 dielectrics on Si:: Interfacial metal diffusion and mobility degradation

We have examined the stability of Al2O3/Si heterostructures and show that significant Al diffusion occurs into the silicon for temperatures of 1000 degreesC and more. This may be caused by dissociation of small quantities of Al2O3 and subsequent dissolution of the Al into the silicon. Such diffusion may be reduced, though not eliminated via an interfacial silicon oxynitride diffusion barrier. Using long channel metal gate Al2O3/Si n field effect transistor data, we show that anneals at 1000 degreesC result in a degradation of the electron mobility by a factor of 2. (C) 2002 American Institute of Physics.