Effective electron mobility reduced by remote charge scattering in high-κ gate stacks

被引：50

作者：

Hiratani, M ^{[1
]}

Saito, S ^{[1
]}

Shimamoto, Y ^{[1
]}

Torii, K ^{[1
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2002年 / 41卷 / 7A期

关键词：

high-kappa; gate; mobility; dielectric; remote charge scattering;

D O I：

10.1143/JJAP.41.4521

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The mobility reduction in high-kappa gate stacks is discussed in terms of remote charge scattering. The mobility is recovered by growing an additional layer of SiO2 at the interface between the high-kappa dielectric and the silicon substrate. A good explanation for this finding is that the Coulomb potential which is induced by the fixed charge at the dielectric/SiO2 interface is responsible for the scattering of electrons.

引用

页码：4521 / 4522

页数：2

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