Room temperature operation of Si single-electron memory with self-aligned floating dot gate

被引：142

作者：

Nakajima, A

Futatsugi, T

Kosemura, K

Fukano, T

Yokoyama, N

机构：

[1] Fujitsu Laboratories, Ltd., Atsugi, 243-01

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 13期

关键词：

D O I：

10.1063/1.118653

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed an excellent fabrication method for a Si single-electron field effect transistor memory device having a self-aligned floating dot gate. This device demonstrates single electron memory operation at room temperature. The ability to precisely control the size and position of the floating dot gate and the channel indicates the feasibility of practical single-electron memory. (C) 1997 American Institute of Physics.

引用

页码：1742 / 1744

页数：3

共 5 条

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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (09) : 1628 - 1638
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