ISOLATED NANOMETER-SIZE SI DOT ARRAYS FABRICATED USING ELECTRON-BEAM LITHOGRAPHY, REACTIVE ION ETCHING, AND WET ETCHING IN NH4OH/H2O2/H2O

被引：27

作者：

NAKAJIMA, A

AOYAMA, H

KAWAMURA, K

机构：

[1] Fujitsu Laboratories Ltd, Atsugi, 243-01

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 12B期

关键词：

SILICON; DOT; ARRAY; NANOFABRICATION; WET ETCHING;

D O I：

10.1143/JJAP.33.L1796

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A simple technique for fabricating an array of isolated nanometer-size Si dots is reported. The processing procedures consist of electron beam lithography and reactive ion etching followed by wet etching in NH4OH/H2O2/H2O. The resulting array has isolated crystalline Si dots, each 10 nm in diameter and 10 nm high. To our knowledge, these are the smallest isolated crystalline Si dots reported to date.

引用

页码：L1796 / L1798

页数：3

共 13 条

[1] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS
CANHAM, LT
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (10) : 1046 - 1048
[2] FABRICATION OF HIGH-ASPECT-RATIO SILICON PILLARS OF LESS-THAN-10-NM DIAMETER
CHEN, W
AHMED, H
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (08) : 1116 - 1118
[3] FABRICATION AND RAMAN-SCATTERING STUDIES OF ONE-DIMENSIONAL NANOMETER STRUCTURES IN (110) SILICON
CHU, AS
ZAIDI, SH
BRUECK, SRJ
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (07) : 905 - 907
[4] 10 NM SI PILLARS FABRICATED USING ELECTRON-BEAM LITHOGRAPHY, REACTIVE ION ETCHING, AND HF ETCHING
FISCHER, PB
DAI, K
CHEN, E
CHOU, SY
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (06): : 2524 - 2527
[5] SILICON CLEANING WITH HYDROGEN PEROXIDE SOLUTIONS - HIGH ENERGY ELECTRON DIFFRACTION AND AUGER ELECTRON SPECTROSCOPY STUDY
HENDERSON, RC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) : 772 - +
[6] POROUS SILICON FORMATION - A QUANTUM WIRE EFFECT
LEHMANN, V
GOSELE, U
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (08) : 856 - 858
[7] OXIDATION OF SUB-50 NM SI COLUMNS FOR LIGHT-EMISSION STUDY
LIU, HI
MALUF, NI
PEASE, RFW
BIEGELSEN, DK
JOHNSON, NM
PONCE, FA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (06): : 2846 - 2850
[8] MORIMOTO K, 1993, 1993 INT C SOL STAT, P344
[9] Ono M., 1993, International Electron Devices Meeting 1993. Technical Digest (Cat. No.93CH3361-3), P119, DOI 10.1109/IEDM.1993.347385
[10] OBSERVATION OF PHONON STRUCTURES IN POROUS SI LUMINESCENCE
SUEMOTO, T
TANAKA, K
NAKAJIMA, A
ITAKURA, T
[J]. PHYSICAL REVIEW LETTERS, 1993, 70 (23) : 3659 - 3662

← 1 2 →