OBSERVATION OF PHONON STRUCTURES IN POROUS SI LUMINESCENCE

被引：127

作者：

SUEMOTO, T ^{[1
]}

TANAKA, K ^{[1
]}

NAKAJIMA, A ^{[1
]}

ITAKURA, T ^{[1
]}

机构：

[1] FUJITSU LABS LTD,ATSUGI 24301,JAPAN

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 70卷 / 23期

关键词：

D O I：

10.1103/PhysRevLett.70.3659

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Steplike phonon structures arc observed in the luminescence spectrum of porous Si under excitation within the luminescence band at liquid He temperature. The shape of the phonon structures are successfully interpreted in terms of a model based on phonon assisted indirect transitions. From the spacing of the structures, it is concluded that the luminescence occurs in an entity which has a phonon spectrum very similar to crystalline Si. The broad spectrum of luminescence is attributed to an inhomogeneous distribution of the indirect band gap energy of Si particles.

引用

页码：3659 / 3662

页数：4

共 11 条

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