PHOTOLUMINESCENCE OF POROUS SI, OXIDIZED THEN DEOXIDIZED CHEMICALLY

被引：101

作者：

NAKAJIMA, A

ITAKURA, T

WATANABE, S

NAKAYAMA, N

机构：

[1] Fujitsu Laboratories Ltd., Atsugi-shi, Kanagawa-ken 243-01

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 01期

关键词：

D O I：

10.1063/1.107663

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We examined the change in photoluminescence spectra of porous Si when it is oxidized then deoxidized chemically. After both steps, photoluminescence shifted to higher frequencies and increased in intensity. These shifts to higher frequencies indicate the photoluminescence is a result of the quantum size effect. Moreover, the increase in photoluminescence intensity after oxidation suggests that termination by hydrogen on the porous Si surface does not always play a key role in the photoluminescence mechanism.

引用

页码：46 / 48

页数：3

共 21 条

[1] THE ORIGIN OF VISIBLE LUMINESCENCE FROM POROUS SILICON - A NEW INTERPRETATION
BRANDT, MS
FUCHS, HD
STUTZMANN, M
WEBER, J
CARDONA, M
[J]. SOLID STATE COMMUNICATIONS, 1992, 81 (04) : 307 - 312
[2] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS
CANHAM, LT
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (10) : 1046 - 1048
[3] INFRARED-SPECTROSCOPY OF SI(111) AND SI(100) SURFACES AFTER HF TREATMENT - HYDROGEN TERMINATION AND SURFACE-MORPHOLOGY
CHABAL, YJ
HIGASHI, GS
RAGHAVACHARI, K
BURROWS, VA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03): : 2104 - 2109
[4] VISIBLE-LIGHT EMISSION DUE TO QUANTUM SIZE EFFECTS IN HIGHLY POROUS CRYSTALLINE SILICON
CULLIS, AG
CANHAM, LT
[J]. NATURE, 1991, 353 (6342) : 335 - 338
[5] EFFECTS OF POLYSILANE FORMATION ON THE OPTICAL AND ELECTRICAL-PROPERTIES OF BINARY SI-H ALLOYS
FURUKAWA, S
MATSUMOTO, N
[J]. PHYSICAL REVIEW B, 1985, 31 (04) : 2114 - 2120
[6] QUANTUM SIZE EFFECTS ON THE OPTICAL BAND-GAP OF MICROCRYSTALLINE SI-H
FURUKAWA, S
MIYASATO, T
[J]. PHYSICAL REVIEW B, 1988, 38 (08): : 5726 - 5729
[7] EVIDENCE FOR QUANTUM CONFINEMENT IN THE PHOTOLUMINESCENCE OF POROUS SI AND SIGE
GARDELIS, S
RIMMER, JS
DAWSON, P
HAMILTON, B
KUBIAK, RA
WHALL, TE
PARKER, EHC
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (17) : 2118 - 2120
[8] INFRARED ABSORPTION OF OXYGEN IN SILICON
HROSTOWSKI, HJ
KAISER, RH
[J]. PHYSICAL REVIEW, 1957, 107 (04): : 966 - 972
[9] INFRARED ABSORPTION AND OXYGEN CONTENT IN SILICON AND GERMANIUM
KAISER, W
KECK, PH
LANGE, CF
[J]. PHYSICAL REVIEW, 1956, 101 (04): : 1264 - 1268
[10] KOBA R, 1985, MATER SCI RES, V19, P301

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