Effective control of surface property on poly(silsesquioxane) films by chemical modification

被引：12

作者：

Hamada, Takashi ^{[1
]}

Nagase, Takashi ^{[1
]}

Kobayashi, Takashi ^{[1
]}

Matsukawa, Kimihiro ^{[1
]}

Naito, Hiroyoshi ^{[1
]}

机构：

[1] Osaka Prefecture Univ, Dept Phys & Elect, Naka Ku, Sakai, Osaka 5998531, Japan

来源：

THIN SOLID FILMS | 2008年 / 517卷 / 04期

关键词：

Polysilsesquioxane; Surface property; Chemical modification; Organic thin-film transistor;

D O I：

10.1016/j.tsf.2008.09.033

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the strategy of controlling the surface properties of polymethylsilsesquioxane (PMSQ) films by a silane-coupling agent. The surface properties of chemically modified PMSQ films are investigated by the water contact angle and Fourier transform infrared (FTIR) measurements. The FTIR spectra show the distinct change of the silanol peaks before and after octadecyltrichlorosilane (OTS) treatments of PMSQ films. The OTS-modified PMSQ films exhibit a high water contact angle of 100 degrees. which is much higher than that of non-treated PMSQ films (89 degrees). The electrical performances of organic thin-film transistors are enhanced by the surface modification of PMSQ films using OTS as the silane-coupling agent. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：1335 / 1339

页数：5

共 18 条

[1] n-Type organic field-effect transistors with very high electron mobility based on thiazole oligomers with trifluoromethylphenyl groups [J].

Ando, S ;

Murakami, R ;

Nishida, J ;

Tada, H ;

Inoue, Y ;

Tokito, S ;

Yamashita, Y .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2005, 127 (43) :14996-14997

[2]

Bao ZN, 2002, ADV FUNCT MATER, V12, P526, DOI 10.1002/1616-3028(20020805)12:8<526::AID-ADFM526>3.0.CO

[3]

2-S

[4]

Dimitrakopoulos CD, 2002, ADV MATER, V14, P99, DOI 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO

[5]

2-9

[6] Static solvent contact angle measurements, surface free energy and wettability determination of various self-assembled monolayers on silicon dioxide [J].

Janssen, Dimitri ;

De Palma, Randy ;

Verlaak, Stijn ;

Heremans, Paul ;

Dehaen, Wim .

THIN SOLID FILMS, 2006, 515 (04) :1433-1438

[7]

Kawase T, 2001, ADV MATER, V13, P1601, DOI 10.1002/1521-4095(200111)13:21<1601::AID-ADMA1601>3.0.CO

[8]

2-X

[9] Significant improvement of electron mobility in organic thin-film transistors based on thiazolothiazole derivative by employing self-assembled monolayer [J].

Kumaki, Daisuke ;

Ando, Shinji ;

Shimono, Satoshi ;

Yamashita, Yoshiro ;

Umeda, Tokiyoshi ;

Tokito, Shizuo .

APPLIED PHYSICS LETTERS, 2007, 90 (05)

[10] Enabling gate dielectric design for all solution-processed, high-performance, flexible organic thin-film transistors [J].

Liu, P ;

Wu, YL ;

Li, YN ;

Ong, BS ;

Zhu, SP .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2006, 128 (14) :4554-4555

← 1 2 →