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Significant improvement of electron mobility in organic thin-film transistors based on thiazolothiazole derivative by employing self-assembled monolayer
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作者:

Kumaki, Daisuke
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机构: NHK Japan Broadcasting Corp, Setagaya Ku, Tokyo 1578510, Japan

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Shimono, Satoshi
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机构: NHK Japan Broadcasting Corp, Setagaya Ku, Tokyo 1578510, Japan

Yamashita, Yoshiro
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机构: NHK Japan Broadcasting Corp, Setagaya Ku, Tokyo 1578510, Japan

Umeda, Tokiyoshi
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机构: NHK Japan Broadcasting Corp, Setagaya Ku, Tokyo 1578510, Japan

Tokito, Shizuo
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机构: NHK Japan Broadcasting Corp, Setagaya Ku, Tokyo 1578510, Japan
机构:
[1] NHK Japan Broadcasting Corp, Setagaya Ku, Tokyo 1578510, Japan
[2] Tokyo Inst Technol, Dept Elect Chem, Midori Ku, Yokohama, Kanagawa 2268502, Japan
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D O I:
10.1063/1.2436641
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
n-type organic thin-film transistors based on a thiazolothiazole derivative were fabricated on a SiO2 gate insulator treated with n-alkyl self-assembled monolayers (SAMs), which were composed of various alkyl chain lengths. The field-effect electron mobility increased depending on the alkyl chain length of the SAMs. A long alkyl chain significantly improved the on current and electron mobility. The highest electron mobility of 1.2 cm(2)/V s and on/off ratio of 10(7) were achieved with an alkyl chain longer than that of tetradecyl-trichlorosilane. This result is attributed to the suppression of the influence of electron trap sites on the SiO2 gate insulator by employing the SAM with the long alkyl chain.
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