Significant improvement of electron mobility in organic thin-film transistors based on thiazolothiazole derivative by employing self-assembled monolayer

被引:74
作者
Kumaki, Daisuke
Ando, Shinji
Shimono, Satoshi
Yamashita, Yoshiro
Umeda, Tokiyoshi
Tokito, Shizuo
机构
[1] NHK Japan Broadcasting Corp, Setagaya Ku, Tokyo 1578510, Japan
[2] Tokyo Inst Technol, Dept Elect Chem, Midori Ku, Yokohama, Kanagawa 2268502, Japan
关键词
D O I
10.1063/1.2436641
中图分类号
O59 [应用物理学];
学科分类号
摘要
n-type organic thin-film transistors based on a thiazolothiazole derivative were fabricated on a SiO2 gate insulator treated with n-alkyl self-assembled monolayers (SAMs), which were composed of various alkyl chain lengths. The field-effect electron mobility increased depending on the alkyl chain length of the SAMs. A long alkyl chain significantly improved the on current and electron mobility. The highest electron mobility of 1.2 cm(2)/V s and on/off ratio of 10(7) were achieved with an alkyl chain longer than that of tetradecyl-trichlorosilane. This result is attributed to the suppression of the influence of electron trap sites on the SiO2 gate insulator by employing the SAM with the long alkyl chain.
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页数:3
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共 22 条
[1]   n-Type organic field-effect transistors with very high electron mobility based on thiazole oligomers with trifluoromethylphenyl groups [J].
Ando, S ;
Murakami, R ;
Nishida, J ;
Tada, H ;
Inoue, Y ;
Tokito, S ;
Yamashita, Y .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2005, 127 (43) :14996-14997
[2]   High performance n-type organic field-effect transistors based on π-electronic systems with trifluoromethylphenyl groups [J].
Ando, S ;
Nishida, JI ;
Tada, H ;
Inoue, Y ;
Tokito, S ;
Yamashita, Y .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2005, 127 (15) :5336-5337
[3]   New air-stable n-channel organic thin film transistors [J].
Bao, ZA ;
Lovinger, AJ ;
Brown, J .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1998, 120 (01) :207-208
[4]   Organic thin film transistors based on N-alkyl perylene diimides:: Charge transport kinetics as a function of gate voltage and temperature [J].
Chesterfield, RJ ;
McKeen, JC ;
Newman, CR ;
Ewbank, PC ;
da Silva, DA ;
Brédas, JL ;
Miller, LL ;
Mann, KR ;
Frisbie, CD .
JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (50) :19281-19292
[5]   General observation of n-type field-effect behaviour in organic semiconductors [J].
Chua, LL ;
Zaumseil, J ;
Chang, JF ;
Ou, ECW ;
Ho, PKH ;
Sirringhaus, H ;
Friend, RH .
NATURE, 2005, 434 (7030) :194-199
[6]   High-mobility C60 field-effect molecular-wetting controlled transistors fabricated on substrates [J].
Itaka, Kenji ;
Yamashiro, Mitsugu ;
Yamaguchi, Jun ;
Haemori, Masamitsu ;
Yaginuma, Seiichiro ;
Matsumoto, Yuji ;
Kondo, Michio ;
Koinuma, Hideomi .
ADVANCED MATERIALS, 2006, 18 (13) :1713-+
[7]   A soluble and air-stable organic semiconductor with high electron mobility [J].
Katz, HE ;
Lovinger, AJ ;
Johnson, J ;
Kloc, C ;
Siegrist, T ;
Li, W ;
Lin, YY ;
Dodabalapur, A .
NATURE, 2000, 404 (6777) :478-481
[8]   Control of carrier density by self-assembled monolayers in organic field-effect transistors [J].
Kobayashi, S ;
Nishikawa, T ;
Takenobu, T ;
Mori, S ;
Shimoda, T ;
Mitani, T ;
Shimotani, H ;
Yoshimoto, N ;
Ogawa, S ;
Iwasa, Y .
NATURE MATERIALS, 2004, 3 (05) :317-322
[9]   Fabrication and characterization of C60 thin-film transistors with high field-effect mobility [J].
Kobayashi, S ;
Takenobu, T ;
Mori, S ;
Fujiwara, A ;
Iwasa, Y .
APPLIED PHYSICS LETTERS, 2003, 82 (25) :4581-4583
[10]   High electron mobility in solution-cast and vapor-deposited phenacyl-quaterthiophene-based field-effect transistors: Toward n-type polythiophenes [J].
Letizia, JA ;
Facchetti, A ;
Stern, CL ;
Ratner, MA ;
Marks, TJ .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2005, 127 (39) :13476-13477