Extraction of thermal time constant in HBTs using small signal measurements

被引：8

作者：

Bruce, S ^{[1
]}

Trasser, A ^{[1
]}

Birk, M ^{[1
]}

Rydberg, A ^{[1
]}

Schumacher, H ^{[1
]}

机构：

[1] UNIV ULM,ABT EBS,D-89069 ULM,GERMANY

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 02期

关键词：

heterojunction bipolar transistors; semiconductor device characterisation;

D O I：

10.1049/el:19970102

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel method for finding the thermal time constant of HBTs is proposed. It utilises small signal measurements in the frequency domain of the typical negative differential resistance found int he active region, i.e. normal bias conditions for the device. In this way, nonlinearities in thermal resistivity do not disturb the extraction and the device needs only to be characterised at one bias point.

引用

页码：165 / 167

页数：3