CW MEASUREMENT OF HBT THERMAL-RESISTANCE

被引：130

作者：

DAWSON, DE

GUPTA, AK

SALIB, ML

机构：

[1] Westinghouse Electric Corporation, Baltimore, MD, 21203

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 10期

关键词：

D O I：

10.1109/16.158793

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Measurements of the temperature dependence of beta and V(BE) were made on AlGaAs/GaAs HBT's and used to determine device thermal resistance. The measurements were CW and not switched or pulsed in order to have a simpler procedure. With base doping greater than 10(19) cm-3 HBT's have negligible base-width modulation (i.e., flat I(C) versus V(CE) characteristics) which makes CW thermal resistance measurement especially direct and simple.

引用

页码：2235 / 2239

页数：5

共 6 条

[1] EXPERIMENTS ON HEAT SINKING OF SEMICONDUCTOR DEVICES [J].